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GaAs Semiconductor Laser Diode with integrated grating structure 760 nm DFB Laser with hermetic Butterfly Housing Collimated beam Model : EYP-DFB-0760-00040-1500-BFW01-000x Wavelength : 760nm Output Power : 10mW

GaAs Semiconductor Laser Diode with integrated grating structure 760 nm DFB Laser with hermetic Butterfly Housing Collimated beam Model :  EYP-DFB-0760-00040-1500-BFW01-000x Wavelength : 760nm Output Power : 10mW

 

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→ 상품 상세 정보 : GaAs Semiconductor Laser Diode with integrated grating structure 760 nm DFB Laser with hermetic Butterfly Housing Collimated beam Model : EYP-DFB-0760-00040-1500-BFW01-000x Wavelength : 760nm Output Power : 10mW

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