Eagleyard – Special Status Products

BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure 808 nm Broad Area Laser Model : EYP-BAL-0808-00003-2013-SOF16-0116 Wavelength : 808nm Output Power : 3.5W
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BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure 808 nm Broad Area Laser Model : EYP-BAL-0808-00003-2013-SOF16-0116 Wavelength : 808nm Output Power : 3.5W

레이저 다이오드 Laser Diode, Eagleyard - Special Status Products

BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure 808 nm Broad Area Laser Model : EYP-BAL-0808-00003-2013-SOF16-0116 Wavelength : 808nm Output Power : 3.5W

레이저 다이오드 Laser Diode, Eagleyard - Special Status Products|

문의하기 → 상품 상세 정보 : BROAD AREA LASER GaAs Semiconductor Laser [...]

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TAPERED AMPLIFIER GaAs Semiconductor Laser Diode 795 nm Tapered Amplifier for External Cavity Setups C-Mount Package Model : EYP-TPR-0795-00500-3006-CMT03-0LAB Wavelength : 795nm Output Power : 0.6W
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TAPERED AMPLIFIER GaAs Semiconductor Laser Diode 795 nm Tapered Amplifier for External Cavity Setups C-Mount Package Model : EYP-TPR-0795-00500-3006-CMT03-0LAB Wavelength : 795nm Output Power : 0.6W

레이저 다이오드 Laser Diode, Eagleyard - Tapered Amplifiers, Eagleyard - Special Status Products

TAPERED AMPLIFIER GaAs Semiconductor Laser Diode 795 nm Tapered Amplifier for External Cavity Setups C-Mount Package Model : EYP-TPR-0795-00500-3006-CMT03-0LAB Wavelength : 795nm Output Power : 0.6W

레이저 다이오드 Laser Diode, Eagleyard - Tapered Amplifiers, Eagleyard - Special Status Products|

문의하기 → 상품 상세 정보 : TAPERED AMPLIFIER GaAs Semiconductor Laser Diode [...]

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TAPERED AMPLIFIER GaAs Semiconductor Laser Diode 780 nm Tapered Amplifier for External Cavity Setups C-Mount Package Model : EYP-TPR-0780-01000-3006-CMT03-0LAB Wavelength : 780nm Output Power : 1.2W
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TAPERED AMPLIFIER GaAs Semiconductor Laser Diode 780 nm Tapered Amplifier for External Cavity Setups C-Mount Package Model : EYP-TPR-0780-01000-3006-CMT03-0LAB Wavelength : 780nm Output Power : 1.2W

레이저 다이오드 Laser Diode, Eagleyard - Special Status Products

TAPERED AMPLIFIER GaAs Semiconductor Laser Diode 780 nm Tapered Amplifier for External Cavity Setups C-Mount Package Model : EYP-TPR-0780-01000-3006-CMT03-0LAB Wavelength : 780nm Output Power : 1.2W

레이저 다이오드 Laser Diode, Eagleyard - Special Status Products|

문의하기 → 상품 상세 정보 : TAPERED AMPLIFIER GaAs Semiconductor Laser Diode [...]

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TAPERED AMPLIFIER GaAs Semiconductor Laser Diode 670 nm Tapered Amplifier for External Cavity Setups C-Mount Package Model : EYP-TPR-0670-00500-2003-CMT02-0LAB Wavelength : 670nm Output Power : 0.6W
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TAPERED AMPLIFIER GaAs Semiconductor Laser Diode 670 nm Tapered Amplifier for External Cavity Setups C-Mount Package Model : EYP-TPR-0670-00500-2003-CMT02-0LAB Wavelength : 670nm Output Power : 0.6W

레이저 다이오드 Laser Diode, Eagleyard - Special Status Products

TAPERED AMPLIFIER GaAs Semiconductor Laser Diode 670 nm Tapered Amplifier for External Cavity Setups C-Mount Package Model : EYP-TPR-0670-00500-2003-CMT02-0LAB Wavelength : 670nm Output Power : 0.6W

레이저 다이오드 Laser Diode, Eagleyard - Special Status Products|

문의하기 → 상품 상세 정보 : TAPERED AMPLIFIER GaAs Semiconductor Laser Diode [...]

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TAPERED AMPLIFIER GaAs Semiconductor Laser Diode 660 nm Tapered Amplifier C-Mount Package Model : EYP-TPA-0660-00250-2003-CMT02-0LAB-010 Wavelength : 660nm Output Power : 0.3W
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TAPERED AMPLIFIER GaAs Semiconductor Laser Diode 660 nm Tapered Amplifier C-Mount Package Model : EYP-TPA-0660-00250-2003-CMT02-0LAB-010 Wavelength : 660nm Output Power : 0.3W

레이저 다이오드 Laser Diode, Eagleyard - Special Status Products

TAPERED AMPLIFIER GaAs Semiconductor Laser Diode 660 nm Tapered Amplifier C-Mount Package Model : EYP-TPA-0660-00250-2003-CMT02-0LAB-010 Wavelength : 660nm Output Power : 0.3W

레이저 다이오드 Laser Diode, Eagleyard - Special Status Products|

문의하기 → 상품 상세 정보 : TAPERED AMPLIFIER GaAs Semiconductor Laser Diode [...]

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TAPERED AMPLIFIER GaAs Semiconductor Laser Diode 633 nm Tapered Amplifier C-Mount Package Model : EYP-TPA-0633-00200-2003-CMT02-0LAB Wavelength : 633nm Output Power : 220mW
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TAPERED AMPLIFIER GaAs Semiconductor Laser Diode 633 nm Tapered Amplifier C-Mount Package Model : EYP-TPA-0633-00200-2003-CMT02-0LAB Wavelength : 633nm Output Power : 220mW

레이저 다이오드 Laser Diode, Eagleyard - Special Status Products

TAPERED AMPLIFIER GaAs Semiconductor Laser Diode 633 nm Tapered Amplifier C-Mount Package Model : EYP-TPA-0633-00200-2003-CMT02-0LAB Wavelength : 633nm Output Power : 220mW

레이저 다이오드 Laser Diode, Eagleyard - Special Status Products|

문의하기 → 상품 상세 정보 : TAPERED AMPLIFIER GaAs Semiconductor Laser Diode [...]

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SINGLE MODE LASER DIODES Fabry-Perot Laser 1064 nm Fabry-Perot Laser C-Mount Package Model : EYP-RWL-1064-00800-3900-CMT04-0000 Wavelength : 1064nm Output Power : 0.9W
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SINGLE MODE LASER DIODES Fabry-Perot Laser 1064 nm Fabry-Perot Laser C-Mount Package Model : EYP-RWL-1064-00800-3900-CMT04-0000 Wavelength : 1064nm Output Power : 0.9W

레이저 다이오드 Laser Diode, Eagleyard - Special Status Products

SINGLE MODE LASER DIODES Fabry-Perot Laser 1064 nm Fabry-Perot Laser C-Mount Package Model : EYP-RWL-1064-00800-3900-CMT04-0000 Wavelength : 1064nm Output Power : 0.9W

레이저 다이오드 Laser Diode, Eagleyard - Special Status Products|

문의하기 → 상품 상세 정보 : SINGLE MODE LASER DIODES Fabry-Perot Laser [...]

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SINGLE FREQUENCY LASER DIODES Distributed Feedback Laser 1120 nm DBR Tapered Laser Model : EYP-DBR-1120-05000-6000-CCP01-0000 Wavelength : 1120nm Output Power : 6W
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SINGLE FREQUENCY LASER DIODES Distributed Feedback Laser 1120 nm DBR Tapered Laser Model : EYP-DBR-1120-05000-6000-CCP01-0000 Wavelength : 1120nm Output Power : 6W

레이저 다이오드 Laser Diode, Eagleyard - Special Status Products

SINGLE FREQUENCY LASER DIODES Distributed Feedback Laser 1120 nm DBR Tapered Laser Model : EYP-DBR-1120-05000-6000-CCP01-0000 Wavelength : 1120nm Output Power : 6W

레이저 다이오드 Laser Diode, Eagleyard - Special Status Products|

문의하기 → 상품 상세 정보 : SINGLE FREQUENCY LASER DIODES Distributed Feedback [...]

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BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure 808 nm Broad Area Laser Model : EYP-BAL-0808-00003-2013-SOF17-0016 Wavelength : 808nm Output Power : 3.5W
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BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure 808 nm Broad Area Laser Model : EYP-BAL-0808-00003-2013-SOF17-0016 Wavelength : 808nm Output Power : 3.5W

Eagleyard - Special Status Products, 레이저 다이오드 Laser Diode

BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure 808 nm Broad Area Laser Model : EYP-BAL-0808-00003-2013-SOF17-0016 Wavelength : 808nm Output Power : 3.5W

Eagleyard - Special Status Products, 레이저 다이오드 Laser Diode|

문의하기 → 상품 상세 정보 : BROAD AREA LASER GaAs Semiconductor Laser [...]

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