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BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure 808 nm Broad Area Laser Model : EYP-BAL-0808-00003-2013-SOF17-0016 Wavelength : 808nm Output Power : 3.5W

BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure 808 nm Broad Area Laser Model : EYP-BAL-0808-00003-2013-SOF17-0016 Wavelength : 808nm Output Power : 3.5W

 

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→ 상품 상세 정보 : BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure 808 nm Broad Area Laser Model : EYP-BAL-0808-00003-2013-SOF17-0016 Wavelength : 808nm Output Power : 3.5W

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