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GaAs Semiconductor Laser Diode with integrated grating structure 852 nm DFB Laser with hermetic TO Housing Model : EYP-DFB-0852-00150-1500-TOC03-000x Wavelength : 852nm Output Power : 30mW

GaAs Semiconductor Laser Diode with integrated grating structure 852 nm DFB Laser with hermetic TO Housing Model : EYP-DFB-0852-00150-1500-TOC03-000x Wavelength : 852nm Output Power : 30mW

 

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→ 상품 상세 정보 : GaAs Semiconductor Laser Diode with integrated grating structure 852 nm DFB Laser with hermetic TO Housing Model : EYP-DFB-0852-00150-1500-TOC03-000x Wavelength : 852nm Output Power : 30mW

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