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GaAs Semiconductor Laser Diode with integrated grating structure 780 nm DBR Laser with hermetic Butterfly Housing Collimated beam Model : EYP-DBR-0633-00005-2000-BFY02-0000 Wavelength : 780m Output Power : 20mW

GaAs Semiconductor Laser Diode with integrated grating structure 780 nm DBR Laser with hermetic Butterfly Housing Collimated beam Model :  EYP-DBR-0633-00005-2000-BFY02-0000 Wavelength : 780m Output Power : 20mW

 

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→ 상품 상세 정보 : GaAs Semiconductor Laser Diode with integrated grating structure 780 nm DBR Laser with hermetic Butterfly Housing Collimated beam Model : EYP-DBR-0633-00005-2000-BFY02-0000 Wavelength : 780m Output Power : 20mW

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