BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure 808 nm Broad Area Laser Model : EYP-BAL-0808-00003-2013-SOF16-0116 Wavelength : 808nm Output Power : 3.5W

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→ 상품 상세 정보 : BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure 808 nm Broad Area Laser Model : EYP-BAL-0808-00003-2013-SOF16-0116 Wavelength : 808nm Output Power : 3.5W

GaAs Semiconductor Laser Diode 808 nm Fabry-Perot Laser C-Mount Package Model : EYP-RWL-0808-00800-4000-CMT04-0000 Wavelength : 808nm Output power : 0.8W
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GaAs Semiconductor Laser Diode 808 nm Fabry-Perot Laser C-Mount Package Model : EYP-RWL-0808-00800-4000-CMT04-0000 Wavelength : 808nm Output power : 0.8W

2021-04-13 | 0 댓글
GaAs Semiconductor Laser Diode 808 nm Ridge Waveguide Laser with hermetic Butterfly Housing Model : EYP-RWL-0808-00800-4000-BFW02-0010 Wavelegth : 808nm Output Power : 0.8W
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GaAs Semiconductor Laser Diode 808 nm Ridge Waveguide Laser with hermetic Butterfly Housing Model : EYP-RWL-0808-00800-4000-BFW02-0010 Wavelegth : 808nm Output Power : 0.8W

2021-04-13 | 0 댓글
GaAs Semiconductor Laser Diode Fabry-Perot 790 nm Fabry-Perot Laser Model : EYP-RWL-0790-00100-1500-SOT02-0000 Wavelength : 790nm Output Power : 100mW
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GaAs Semiconductor Laser Diode Fabry-Perot 790 nm Fabry-Perot Laser Model : EYP-RWL-0790-00100-1500-SOT02-0000 Wavelength : 790nm Output Power : 100mW

2021-04-13 | 0 댓글
GaAs Semiconductor Laser Diode with integrated grating structure 767 nm DFB Laser with hermetic Housing Model : EYP-DFB-0767-00050-1500-TOC03-000x Wavelength : 767nm Output Power : 10mW
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GaAs Semiconductor Laser Diode with integrated grating structure 767 nm DFB Laser with hermetic Housing Model : EYP-DFB-0767-00050-1500-TOC03-000x Wavelength : 767nm Output Power : 10mW

2021-04-13 | 0 댓글
SINGLE FREQUENCY LASER DIODES Distributed Feedback Laser 767 nm DFB Laser with hermetic Butterfly Housing Collimated beam Model : EYP-DFB-0767-00050-1500-BFW01-000x Wavelength : 767nm Output Power : 50mW
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SINGLE FREQUENCY LASER DIODES Distributed Feedback Laser 767 nm DFB Laser with hermetic Butterfly Housing Collimated beam Model : EYP-DFB-0767-00050-1500-BFW01-000x Wavelength : 767nm Output Power : 50mW

2021-04-13 | 0 댓글
GaAs Semiconductor Laser Diode with integrated grating structure 764 nm DFB Laser with hermetic Housing Model : EYP-DFB-0764-00040-1500-TOC03-000x Wavelength : 764nm Output Power : 10mW
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GaAs Semiconductor Laser Diode with integrated grating structure 764 nm DFB Laser with hermetic Housing Model : EYP-DFB-0764-00040-1500-TOC03-000x Wavelength : 764nm Output Power : 10mW

2021-04-13 | 0 댓글
GaAs Semiconductor Laser Diode with integrated grating structure 764 nm DFB Laser with hermetic Butterfly Housing PM Fiber with angle-polished Connector Model : EYP-DFB-0764-00010-1500-BFY02-0x0x Wavelength : 764nm Output Power : 2mW
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GaAs Semiconductor Laser Diode with integrated grating structure 764 nm DFB Laser with hermetic Butterfly Housing PM Fiber with angle-polished Connector Model : EYP-DFB-0764-00010-1500-BFY02-0x0x Wavelength : 764nm Output Power : 2mW

2021-04-13 | 0 댓글
GaAs Semiconductor Laser Diode with integrated grating structure 760 nm DFB Laser with hermetic Housing Model : EYP-DFB-0760-00040-1500-TOC03-000x Wavelength : 760nm Output Power : 10mW
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GaAs Semiconductor Laser Diode with integrated grating structure 760 nm DFB Laser with hermetic Housing Model : EYP-DFB-0760-00040-1500-TOC03-000x Wavelength : 760nm Output Power : 10mW

2021-04-13 | 0 댓글

BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure 808 nm Broad Area Laser Model : EYP-BAL-0808-00003-2013-SOF16-0116 Wavelength : 808nm Output Power : 3.5W

→ 상품 상세 정보 : BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure 808 nm Broad Area Laser Model : EYP-BAL-0808-00003-2013-SOF16-0116 Wavelength : 808nm Output Power : 3.5W

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