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GaAs Semiconductor Laser Diode with integrated grating structure 1083 nm DFB Laser with hermetic Butterfly Housing Collimated beam Model : EYP-DFB-1083-00080-1500-BFW01-0000 Wavelength : 1083nm Output Power : 90mW

GaAs Semiconductor Laser Diode with integrated grating structure 1083 nm DFB Laser with hermetic Butterfly Housing Collimated beam Model : EYP-DFB-1083-00080-1500-BFW01-0000 Wavelength : 1083nm Output Power : 90mW

 

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→ 상품 상세 정보 : GaAs Semiconductor Laser Diode with integrated grating structure 1083 nm DFB Laser with hermetic Butterfly Housing Collimated beam Model : EYP-DFB-1083-00080-1500-BFW01-0000 Wavelength : 1083nm Output Power : 90mW

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