BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure 808 nm Broad Area Laser Model : EYP-BAL-0808-00003-2013-SOF16-0116 Wavelength : 808nm Output Power : 3.5W
BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure 808 nm Broad Area Laser Model : EYP-BAL-0808-00003-2013-SOF16-0116 Wavelength : 808nm Output Power : 3.5W
→ 상품 상세 정보 : BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure 808 nm Broad Area Laser Model : EYP-BAL-0808-00003-2013-SOF16-0116 Wavelength : 808nm Output Power : 3.5W