---
title: "GaAs Semiconductor Laser Diode with integrated grating structure 760 nm DFB Laser with hermetic Butterfly Housing Collimated beam Model :  EYP-DFB-0760-00040-1500-BFW01-000x Wavelength : 760nm Output Power : 10mW"
url: "https://bmlaser.co.kr/gaas-semiconductor-laser-diode-with-integrated-grating-structure-760-nm-dfb-laser-with-hermetic-butterfly-housing-collimated-beam-model-eyp-dfb-0760-00040-1500-bfw01-000x-wavelength-760nm-output/"
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type: "Article"
datePublished: "2021-04-13T14:38:46+00:00"
dateModified: "2021-04-13T15:30:03+00:00"
---

# GaAs Semiconductor Laser Diode with integrated grating structure 760 nm DFB Laser with hermetic Butterfly Housing Collimated beam Model : EYP-DFB-0760-00040-1500-BFW01-000x Wavelength : 760nm Output Power : 10mW

## 페이지 요약

문의하기 → 상품 상세 정보 : GaAs Semiconductor Laser Diode with integrated grating structure 760 nm DFB Laser with hermetic Butterfly Housing Collimated beam Model : EYP-DFB-0760-00040-1500-BFW01-000x Wavelength : 760nm Output Power : 10mW
