---
title: "GaAs Semiconductor Laser Diode with integrated grating structure 780 nm DBR Laser with hermetic Butterfly Housing Collimated beam Model :  EYP-DBR-0633-00005-2000-BFY02-0000 Wavelength : 780m Output Power : 20mW"
url: "https://bmlaser.co.kr/gaas-semiconductor-laser-diode-with-integrated-grating-structure-780-nm-dbr-laser-with-hermetic-butterfly-housing-collimated-beam-model-eyp-dbr-0633-00005-2000-bfy02-0000-wavelength-780m-output-p/"
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type: "Article"
datePublished: "2021-04-13T14:38:43+00:00"
dateModified: "2021-04-13T15:30:04+00:00"
---

# GaAs Semiconductor Laser Diode with integrated grating structure 780 nm DBR Laser with hermetic Butterfly Housing Collimated beam Model : EYP-DBR-0633-00005-2000-BFY02-0000 Wavelength : 780m Output Power : 20mW

## 페이지 요약

문의하기 → 상품 상세 정보 : GaAs Semiconductor Laser Diode with integrated grating structure 780 nm DBR Laser with hermetic Butterfly Housing Collimated beam Model : EYP-DBR-0633-00005-2000-BFY02-0000 Wavelength : 780m Output Power : 20mW
