---
title: "GaAs Semiconductor Laser Diode Single Emitter Structure 670 nm Broad Area Laser sealed TO Housing Model : EYP-BAL-0670-00001-1510-SOT23-0016 Wavelength : 670nm Output Power : 1.8W"
url: "https://bmlaser.co.kr/gaas-semiconductor-laser-diode-single-emitter-structure-670-nm-broad-area-laser-sealed-to-housing-model-eyp-bal-0670-00001-1510-sot23-0016-wavelength-670nm-output-power-1-8w/"
description: "<body><div class=\"fusion-text fusion-text-2\"><div id=\"wrap\"><div id=\"inner\"><div class=\"comm_inner\"><div id=\"container\"><div id=\"contents\"><div class=\"xans-element- xans-product xans-product-additional \"><div id=\"prdDeta"
image: "https://bmlaser.co.kr/wp-content/uploads/2021/04/495_shop1_973659.jpg"
type: "Article"
datePublished: "2021-04-13T14:38:40+00:00"
dateModified: "2021-04-13T15:46:23+00:00"
---

# GaAs Semiconductor Laser Diode Single Emitter Structure 670 nm Broad Area Laser sealed TO Housing Model : EYP-BAL-0670-00001-1510-SOT23-0016 Wavelength : 670nm Output Power : 1. 8W

## 페이지 요약

문의하기 → 상품 상세 정보 : GaAs Semiconductor Laser Diode Single Emitter Structure 670 nm Broad Area Laser sealed TO Housing Model : EYP-BAL-0670-00001-1510-SOT23-0016 Wavelength : 670nm Output Power : 1. 8W
