---
title: "GaAs Semiconductor Laser Diode Single Emitter Structure GaAs Semiconductor Laser Diode Single Emitter Structure sealed TO Housing Model : EYP-BAL-0808-00005-2013-SOT12-0010 Wavelength : 808nm Output Power : 7W"
url: "https://bmlaser.co.kr/gaas-semiconductor-laser-diode-single-emitter-structure-gaas-semiconductor-laser-diode-single-emitter-structure-sealed-to-housing-model-eyp-bal-0808-00005-2013-sot12-0010-wavelength-808nm-output-p/"
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image: "https://bmlaser.co.kr/wp-content/uploads/2021/04/499_shop1_291087.jpg"
type: "Article"
datePublished: "2021-04-13T14:38:40+00:00"
dateModified: "2021-04-13T15:46:23+00:00"
---

# GaAs Semiconductor Laser Diode Single Emitter Structure GaAs Semiconductor Laser Diode Single Emitter Structure sealed TO Housing Model : EYP-BAL-0808-00005-2013-SOT12-0010 Wavelength : 808nm Output Power : 7W

## 페이지 요약

문의하기 → 상품 상세 정보 : GaAs Semiconductor Laser Diode Single Emitter Structure GaAs Semiconductor Laser Diode Single Emitter Structure sealed TO Housing Model : EYP-BAL-0808-00005-2013-SOT12-0010 Wavelength : 808nm Output Power : 7W
