---
title: "BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure 808 nm Broad Area Laser Model : EYP-BAL-0808-00003-2013-SOF16-0116 Wavelength : 808nm Output Power : 3.5W"
url: "https://bmlaser.co.kr/broad-area-laser-gaas-semiconductor-laser-diode-single-emitter-structure-808-nm-broad-area-laser-model-eyp-bal-0808-00003-2013-sof16-0116-wavelength-808nm-output-power-3-5w/"
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type: "Article"
datePublished: "2021-04-13T14:38:28+00:00"
dateModified: "2021-04-13T15:59:10+00:00"
---

# BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure 808 nm Broad Area Laser Model : EYP-BAL-0808-00003-2013-SOF16-0116 Wavelength : 808nm Output Power : 3. 5W

## 페이지 요약

문의하기 → 상품 상세 정보 : BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure 808 nm Broad Area Laser Model : EYP-BAL-0808-00003-2013-SOF16-0116 Wavelength : 808nm Output Power : 3. 5W
